The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Mar. 03, 2005
Rudolf Emmanuel Isidore Schropp, Driebergen, NL;
Catharina Henriette Maria Van Der Werf, Utrecht, NL;
Bernd Stannowski, Westervoort, NL;
Rudolf Emmanuel Isidore Schropp, Driebergen, NL;
Catharina Henriette Maria Van Der Werf, Utrecht, NL;
Bernd Stannowski, Westervoort, NL;
Universiteit Utrecht Holding B.V., Utrecht, NL;
Abstract
A silicon nitride thin film formation apparatus is provided for stationary and moving substrates and a process for forming such films. The process provides high uniformity of film thickness and film properties as well as a high deposition rate. The film properties are adequate for application as an antireflection layer or passivation layer in solar cell devices or as dielectric layer in thin film transistors. The apparatus includes a number of metal filaments. In the space within the formation apparatus opposite to the substrate with respect to the filaments, a gas dosage system is arranged at a predetermined distance of the filaments. The film formation apparatus for stationary substrates also contains a shutter to control the starting and ending conditions for film formation and to control the film thickness.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile