The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Dec. 28, 2007
Gyu Dong Cho, Seoul, KR;
Ho Jin Cho, Gyeonggi-do, KR;
Hyun Jung Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Kyoungki-do, KR;
Abstract
A method for manufacturing a semiconductor device for use in avoiding unwanted oxidation along exposed surfaces and for use in relieving etching damage is presented. The method includes step of forming sequentially a gate insulation layer, a polysilicon layer, a barrier layer, a metallic layer and a hard mask layer over a semiconductor substrate. The method also includes a step of etching the hard mask layer, the metallic layer, the barrier layer, the polysilicon layer and the gate insulation layer to form a gate. The method also includes a nitrifying step which uses a free radical is assisted chemical vapor deposition (RACVD) nitrifying process on surfaces of the layers forming the gate and a surface of the semiconductor substrate. The method also includes a step of subsequently performing a reoxidation process to the semiconductor substrate resultant that the RACVD nitrifying process is performed.