The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Mar. 30, 2009
Ted Johansson, Djursholm, SE;
Ted Johansson, Djursholm, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabrication of a monolithically integrated SOI substrate capacitor has the steps of: forming an insulating trench, which reaches down to the insulator and surrounds a region of the monocrystalline silicon of a SOI structure, doping the monocrystalline silicon region, forming an insulating, which can be nitride, layer region on a portion of the monocrystalline silicon region, forming a doped silicon layer region on the insulating layer region, and forming an insulating outside sidewall spacer on the monocrystalline silicon region, where the outside sidewall spacer surrounds the doped silicon layer region to provide an isolation between the doped silicon layer region and exposed portions of the monocrystalline silicon region. The monocrystalline silicon region, the insulating layer region, and the doped silicon layer region constitute a lower electrode, a dielectric, and an upper electrode of the capacitor.