The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jul. 18, 2008
Jun-ho Jeong, Gyeonggi-do, KR;
Jang-eun Lee, Gyeonggi-do, KR;
Se-chung OH, Gyeonggi-do, KR;
Kyung-tae Nam, Gyeonggi-do, KR;
In-gyu Baek, Seoul, KR;
Jun-Ho Jeong, Gyeonggi-do, KR;
Jang-Eun Lee, Gyeonggi-do, KR;
Se-Chung Oh, Gyeonggi-do, KR;
Kyung-Tae Nam, Gyeonggi-do, KR;
In-Gyu Baek, Seoul, KR;
Abstract
Provided is a method of manufacturing a semiconductor device having a switching device capable of preventing a snake current. First, a transition metal oxide layer and a leakage control layer are alternately stacked on a substrate 1 to 20 times to form a varistor layer. The transition metal oxide layer is formed to contain an excessive transition metal compared to its stable state. The leakage control layer may be formed of one selected from the group consisting of a Mg layer, a Ta layer, an Al layer, a Zr layer, a Hf layer, a polysilicon layer, a conductive carbon group layer, and a Nb layer.