The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
May. 21, 2008
Amol M. Kalburge, Irvine, CA (US);
Amol M. Kalburge, Irvine, CA (US);
RF Nano, Newport Beach, CA (US);
Abstract
A method is provided of integrating the formation of nanotube devices on the same substrate or wafer as CMOS devices in a standard CMOS process. During a CMOS formation process, a region of the substrate containing CMOS devices is protected from certain nanotube fabrication processes while fabricating nanotube devices on the substrate. After fabrication of the nanotube devices, the region of the substrate containing the fabricated nanotube devices is then protected from certain CMOS fabrication processes while fabricating CMOS devices on a different region of the same substrate. Through this formation method, a nanotube device based RF/analog system-on-chip (SoC) application can be formed having the superior RF/analog properties of nanotube electronic circuitry and the superior digital properties of silicon CMOS circuitry on the same wafer or substrate.