The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jun. 08, 2007
Suk-ho Yoon, Seoul, KR;
Sung-ho Jin, Seoul, KR;
Kyoung-kook Kim, Suwon-si, KR;
Jeong-wook Lee, Seongnam-si, KR;
Suk-ho Yoon, Seoul, KR;
Sung-ho Jin, Seoul, KR;
Kyoung-kook Kim, Suwon-si, KR;
Jeong-wook Lee, Seongnam-si, KR;
Samsung LED Co., Ltd., Gyunggi-do, KR;
Abstract
Provided is a nitride-based semiconductor light emitting device having increased efficiency and power characteristics and method of manufacturing the same. The method may include forming a sacrificial layer on a substrate, forming a passivation layer on the sacrificial layer, forming a plurality of masking dots of a metal nitride on the passivation layer, laterally epitaxially growing a nitride-based semiconductor layer on the passivation layer using the masking dots as masks, forming a semiconductor device on the nitride-based semiconductor layer, and wet etching the sacrificial layer to separate and/or remove the substrate from the semiconductor device.