The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jul. 18, 2006
Applicants:
Toshio Nomaguchi, Kanagawa, JP;
Tetsuya Hattori, Kanagawa, JP;
Inventors:
Toshio Nomaguchi, Kanagawa, JP;
Tetsuya Hattori, Kanagawa, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-Shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a semiconductor laser diode prevents not only the adhesion of the upper electrode but the heat dissipation of the mesa from degrading. The laser diode includes a substrate, portion of which forms a mesa including an active layer, an insulating layer formed so as to bury the mesa, and an electrode formed on the mesa and the insulating layer. This insulating layer may be selected from SiO, SiON, SiN, AlOor ZrOand formed by the inductive coupling plasma-enhanced chemical vapor deposition (ICP-CVD) technique.