The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Jun. 19, 2006
Gaku Kanou, Ibaraki, JP;
Yuichiro Shindo, Ibaraki, JP;
Gaku Kanou, Ibaraki, JP;
Yuichiro Shindo, Ibaraki, JP;
JX Nippon Mining & Metals Corporation, Tokyo, JP;
Abstract
In order to obtain a high purity sputtered film for a capacitor electrode of a semiconductor memory and to make the sputtered film have uniform thickness and good adhesiveness with Si substrate, a high-purity Ru alloy target is provided, wherein a total content of the platinum group elements excluding Ru is in a range of 15 to 200 wtppm and remnants are Ru and inevitable impurities. Also, provided is a manufacturing method of the high-purity Ru alloy target, comprising the steps of mixing Ru powder having a purity of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding of the mixed powder to obtain a compact, performing electron beam melting of the compact to obtain an ingot, and forging the ingot at 1400 to 1900° C.