The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2011

Filed:

Apr. 02, 2009
Applicants:

Masashi Kubota, Kyoto, JP;

Kuniyoshi Okamoto, Kyoto, JP;

Taketoshi Tanaka, Kyoto, JP;

Inventors:

Masashi Kubota, Kyoto, JP;

Kuniyoshi Okamoto, Kyoto, JP;

Taketoshi Tanaka, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/00 (2006.01); H01S 3/10 (2006.01); H01S 5/00 (2006.01); H01S 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength λof a reflectance spectrum satisfies the relation λ−10 nm≦λ≦λ+10 nm with respect to an emission peak wavelength λof spontaneous emission in the active layer.


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