The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Aug. 31, 2006
Chee Wei Wong, New York, NY (US);
James F. Mcmillan, New York, NY (US);
Xiaodong Yang, New York, NY (US);
Richard Osgood, Jr., Chappaqua, NY (US);
Jerry Dadap, Red Bank, NJ (US);
Nicolae C. Panoiu, Barnet, GB;
Chee Wei Wong, New York, NY (US);
James F. McMillan, New York, NY (US);
Xiaodong Yang, New York, NY (US);
Richard Osgood, Jr., Chappaqua, NY (US);
Jerry Dadap, Red Bank, NJ (US);
Nicolae C. Panoiu, Barnet, GB;
The Trustees of Columbia University in the City of New York, New York, NY (US);
Abstract
Devices and methods for providing stimulated Raman lasing are provided. In some embodiments, devices include a photonic crystal that includes a layer of silicon having a lattice of holes and a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing. In some embodiments, methods include forming a layer of silicon, and etching the layer of silicon to form a lattice of holes with a linear defect that forms a waveguide configured to receive pump light and output Stokes light through Raman scattering, wherein the thickness of the layer of silicon, the spacing of the lattice of holes, and the size of the holes are dimensioned to provide Raman lasing.