The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7869261 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 11, 2011

Filed:

Apr. 04, 2006
Applicant:

Takashi Ozawa, Kasugai, JP;

Inventor:

Takashi Ozawa, Kasugai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory maintains securely the stored contents in the memory cells, and it is written with data reliably even in a case where a relatively low supply voltage is applied. A memory cell Mcomprises a pair of inverters cross-coupled with each other, a first switching unit provided between bit line BL and the output terminal of one of the inverters, and a second switching unit provided between bit line XBL and the output terminal of the other inverter. The first switching unit and the second switching unit are controlled to be conductive such that the conductance of the switches be larger for the writing operation than for the reading operation.


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Ozawa, Takashi. (2011). Semiconductor memory which enables reliable data writing with low supply voltage by improving the conductance via access transistors during write operation (U.S. Patent No. 7869261). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7869261

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