The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Dec. 17, 2007
Richard K. Williams, Cupertino, CA (US);
Donald Ray Disney, Cupertino, CA (US);
Wai Tien Chan, Hong Kong, CN;
Richard K. Williams, Cupertino, CA (US);
Donald Ray Disney, Cupertino, CA (US);
Wai Tien Chan, Hong Kong, CN;
Advanced Analogic Technologies, Inc., Santa Clara, CA (US);
Advanced Analogic Technologies (Hong Kong) Limited, Hong Kong, CN;
Abstract
A bipolar transistor is formed in an isolation structure comprising a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This structure provides a relatively deep isolated pocket in a semiconductor substrate while limiting the depth of the trench that must be etched in the substrate.