The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Nov. 13, 2007
Jae-gil Lee, Gyeonggi-do, KR;
Chang-wook Kim, Gyeonggi-do, KR;
Ho-cheol Jang, Gyeonggi-do, KR;
Chong-man Yun, Seoul, KR;
Jae-gil Lee, Gyeonggi-do, KR;
Chang-wook Kim, Gyeonggi-do, KR;
Ho-cheol Jang, Gyeonggi-do, KR;
Chong-man Yun, Seoul, KR;
Fairchild Korea Semiconductor Ltd., Kyungki-do, KR;
Abstract
A high-voltage semiconductor device includes a semiconductor layer having a plurality of pillars of a first conductivity type defined by a plurality of trenches which extend from a top surface of the semiconductor layer toward a bottom surface thereof. A charge compensation layer of a second conductivity type is disposed over at least sidewalls of each trench to a predetermined thickness to form a groove in each trench. A charge compensation plug of the first conductivity type substantially fills each groove.