The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Aug. 15, 2007
Joo Won Hwang, Seoul, KR;
Joo Won Hwang, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
The invention relates to a flash memory device and its method of fabrication. The method includes the steps of: forming gate protection patterns over a peripheral region of a semiconductor substrate; forming a tunnel insulating film over the semiconductor substrate; forming a first conductive film over the tunnel insulating film between adjacent gate protection patterns; forming a dielectric film over the first conductive film and the gate protection patterns; etching a portion of the dielectric film in the peripheral region to expose a portion of the first conductive film between adjacent gate protection patterns; forming a second conductive film over the dielectric film and the first conductive film; and etching the second conductive film, the dielectric film, the first conductive film, the tunnel insulating film and the gate protection patterns to form a gate, wherein the gate protection patterns remain on the sidewalls of the first conductive film and the tunnel insulating film in the peripheral region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile