The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Feb. 21, 2008
Seok-woon Lee, Tainan, TW;
Sung-soo Park, Tainan, TW;
Biing-seng Wu, Tainan, TW;
Chi Mei El Corp., Tainan County, TW;
Chimei Innolux Corporation, Miao-Li County, TW;
Abstract
A semiconductor device, comprising a substrate, a semiconductive layer and a gate electrode is provided. The semiconductive layer having a crystallization promoting material is formed over the substrate. The semiconductive layer has a channel region, a first doped region and a second doped region. The first doped region has a donor and an acceptor, and the second doped region has a dopant which is selected from one of the donor and the acceptor. The second doped region is disposed between the first doped region and the channel region. The gate electrode is insulated from the channel region.