The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Mar. 28, 2008
Carsten Rohr, Oslo, NO;
Keith W. J. Barnham, Surrey, GB;
Nicholas Ekins-daukes, London, GB;
James P. Connolly, London, GB;
Ian M. Ballard, Essex, GB;
Massimo Mazzer, Parma, IT;
Carsten Rohr, Oslo, NO;
Keith W. J. Barnham, Surrey, GB;
Nicholas Ekins-Daukes, London, GB;
James P. Connolly, London, GB;
Ian M. Ballard, Essex, GB;
Massimo Mazzer, Parma, IT;
Imperial Innovations Ltd., London, GB;
Abstract
A method of forming a photovoltaic device includes a plurality of quantum wells and a plurality of barriers. The quantum wells and barriers are disposed on an underlying layer. The barriers alternate with the quantum wells. One of the plurality of quantum wells and the plurality of barriers is comprised of tensile strained layers and the other of the plurality of quantum wells and the plurality of barriers is comprised of compressively strained layers. The tensile and compressively strained layers have elastic properties. The method includes selecting compositions and thicknesses of the barriers and quantum wells taking into account the elastic properties such that each period of one tensile strained layer and one compressively strained layer exerts substantially no shear force on a neighboring structure; providing the underlying layer; and forming the quantum sells and barriers on the underlying layer according to the derived compositions and thicknesses.