The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Feb. 20, 2007
Dirk Caspary, Dresden, DE;
Arnd Scholz, Dresden, DE;
Stefano Parascandola, Dresden, DE;
Christoph Nölscher, Nürnberg, DE;
Dirk Caspary, Dresden, DE;
Arnd Scholz, Dresden, DE;
Stefano Parascandola, Dresden, DE;
Christoph Nölscher, Nürnberg, DE;
Qimonda AG, Munich, DE;
Abstract
A method of manufacturing semiconductor structures is disclosed. In one embodiment, a first mask is provided above a substrate. The first mask includes first mask lines extending along a first axis. A second mask is provided above the first mask. The second mask includes second mask lines extending along a second axis that intersects the first axis. At least one of the first and second masks is formed by a pitch fragmentation method. Structures may be formed in the substrate, wherein the first and the second mask are effective as a combined mask. The structures may be equally spaced at a pitch in the range of a minimum lithographic feature size for repetitive line structures.