The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jun. 28, 2007
Applicants:
Ki-won Nam, Kyoungki-do, KR;
Ky-hyun Han, Kyoungki-do, KR;
Inventors:
Ki-Won Nam, Kyoungki-do, KR;
Ky-Hyun Han, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/467 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a pattern in a semiconductor device includes forming an etch target layer, forming a hard mask over the etch target layer, the hard mask including a multiple-layer stack structure comprising a bottom layer, a transformed layer, and an upper layer, wherein the transformed layer is formed by transforming a surface of the bottom layer. The hard mask and the etch target layer are etched.