The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 03, 2007
Dae-yong Kim, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Eun-ok Lee, Incheon, KR;
Dae-Yong Kim, Gyeonggi-do, KR;
Jong-Ho Yun, Gyeonggi-do, KR;
Hyun-Su Kim, Gyeonggi-do, KR;
Eun-Ji Jung, Gyeonggi-do, KR;
Eun-Ok Lee, Incheon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.