The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 02, 2008
Jin-bum Kim, Seoul, KR;
Young-pil Kim, Gyeonggi-do, KR;
Jung-yun Won, Gyeonggi-do, KR;
Hion-suck Baik, Chungcheonnam-do, KR;
Jun-ho Lee, Seoul, KR;
Jin-Bum Kim, Seoul, KR;
Young-Pil Kim, Gyeonggi-do, KR;
Jung-Yun Won, Gyeonggi-do, KR;
Hion-Suck Baik, Chungcheonnam-do, KR;
Jun-Ho Lee, Seoul, KR;
Abstract
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.