The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Sep. 27, 2007
Luis-felipe Giles, Munich, DE;
Rainer Liebmann, Haar, DE;
Chris Stapelmann, Tervuren, BE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for fabricating a semiconductor device including implanting a selected material at a desired target depth below a surface of a silicon substrate, performing an annealing process to create a band of precipitates formed from the selected material and the silicon of the silicon substrate at the desired target depth, and forming a source region and a drain region in the substrate such that a channel region there between is positioned above the band of precipitates, wherein the desired target depth is such that a desired separation distance is achieved between the channel region and the band of precipitates, and wherein an average lattice constant of the band of precipitates is different from the average lattice constant of the silicon substrate so as to cause a stress in the channel region.