The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Sep. 03, 2008
Ken-ichi Nonaka, Wako, JP;
Hideki Hashimoto, Wako, JP;
Seiichi Yokoyama, Wako, JP;
Kensuke Iwanaga, Wako, JP;
Yoshimitsu Saito, Wako, JP;
Ken-ichi Nonaka, Wako, JP;
Hideki Hashimoto, Wako, JP;
Seiichi Yokoyama, Wako, JP;
Kensuke Iwanaga, Wako, JP;
Yoshimitsu Saito, Wako, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.