The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Sep. 18, 2008
Manufacturing method of flash memory device comprising gate columns penetrating through a cell stack
Hack Seob Shin, Suwon-si, KR;
Kyoung Hwan Park, Seoul, KR;
Young OK Hong, Icheon-si, KR;
Yu Jin Park, Gyeongju-si, KR;
Hack Seob Shin, Suwon-si, KR;
Kyoung Hwan Park, Seoul, KR;
Young Ok Hong, Icheon-si, KR;
Yu Jin Park, Gyeongju-si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A flash memory device includes a substrate, a cell stack having a semiconductor layer, in which junction areas for setting areas therebetween to channel areas are formed in a shape of a stripe, and an interlayer isolation layer for insulating the semiconductor layer, wherein the semiconductor layer and the interlayer isolation layer are repeatedly stacked. The flash memory device further includes an array of gate columns penetrating through the cell stack, perpendicular to the substrate and cutting through the junction areas to dispose the junction areas at both sides thereof, and a trap layered stack introduced into an interface between the gate column and the cell stack to store charge.