The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jun. 20, 2008
Jonathan J. Halls, Cambridgeshire, GB;
Craig E. Murphy, Teddington, GB;
Gregory Whiting, Los Altos, CA (US);
Sadayoshi Hotta, Kadoma, JP;
Jonathan J. Halls, Cambridgeshire, GB;
Craig E. Murphy, Teddington, GB;
Gregory Whiting, Los Altos, CA (US);
Sadayoshi Hotta, Kadoma, JP;
Cambridge Display Technology Limited, Cambridgeshire, GB;
Panasonic Corporation, Osaka, JP;
Abstract
A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.