The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 10, 2009
Applicants:
Duy-phach VU, San Jose, CA (US);
Quoc-bao VU, Allen, TX (US);
Inventors:
Duy-Phach Vu, San Jose, CA (US);
Quoc-Bao Vu, Allen, TX (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to the formation of thin-film crystalline silicon using a zone-melting recrystallization process in which the substrate is a ceramic material. Integrated circuits and solar cells are fabricated in the recrystallized silicon thin film and lifted off the substrate. Following lift-off, these circuits and devices are self-sustained, lightweight and flexible and the released ceramic substrate can be reused making the device fabrication process cost effective.