The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2011

Filed:

Mar. 29, 2005
Applicants:

Ryne P. Raffaelle, Honeoye Falls, NY (US);

Phillip Jenkins, Cleveland Heights, OH (US);

David Wilt, Bay Village, OH (US);

David Scheiman, Cleveland, OH (US);

Donald Chubb, Olmsted Falls, OH (US);

Stephanie Castro, Westlake, OH (US);

Inventors:

Ryne P. Raffaelle, Honeoye Falls, NY (US);

Phillip Jenkins, Cleveland Heights, OH (US);

David Wilt, Bay Village, OH (US);

David Scheiman, Cleveland, OH (US);

Donald Chubb, Olmsted Falls, OH (US);

Stephanie Castro, Westlake, OH (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 14/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.


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