The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Jul. 24, 2007
Oizhou Yao, Coralville, IA (US);
Allen W. Jones, Cedar Rapids, IA (US);
Don L. Landt, Palo, IA (US);
Gary E. Lehtola, Alburnett, IA (US);
Oizhou Yao, Coralville, IA (US);
Allen W. Jones, Cedar Rapids, IA (US);
Don L. Landt, Palo, IA (US);
Gary E. Lehtola, Alburnett, IA (US);
Rockwell Collins, Inc., Cedar Rapids, IA (US);
Abstract
A composite plate comprising CNT bundles with high thermal conductivity is formed by the method comprising preparing a CNT growth substrate, depositing a CNT growth catalyst on the CNT growth substrate, preparing a wafer with etched through via arrays, placing the wafer with the etched through via arrays over the CNT growth substrate with the CNT growth catalyst, growing CNT bundles in the etched through via arrays on the wafer over the CNT growth substrate with the CNT growth catalyst in a CVD chamber to form a wafer matrix CNT composite structure; and removing the CNT growth substrate from the wafer matrix CNT composite structure. The formed composite plate comprising CNT bundles with high thermal conductivity has improved CTE silicon match, has a more effective thermal conductivity than a silicon matrix or Cu or Cu alloy substrate, and contains nanotubes that remain vertical.