The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2011
Filed:
Oct. 02, 2006
Michael G. Spencer, Ithaca, NY (US);
Phani Konkapaka, Boise, ID (US);
Huaqiang Wu, Sunnyvale, CA (US);
Yuri Makarov, Midlothian, VA (US);
Michael G. Spencer, Ithaca, NY (US);
Phani Konkapaka, Boise, ID (US);
Huaqiang Wu, Sunnyvale, CA (US);
Yuri Makarov, Midlothian, VA (US);
Cornell Research Foundation, Inc., Ithaca, NY (US);
Abstract
GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and Nvapors at temperatures between approximately 1000 and 1200° C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.