The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Sep. 17, 2008
Yoram Betser, Mazkeret Batya, IL;
Yair Sofer, Tel-Aviv, IL;
Oren Shlomo, Nesher, IL;
Avri Harush, Kyriat Bialik, IL;
Yoram Betser, Mazkeret Batya, IL;
Yair Sofer, Tel-Aviv, IL;
Oren Shlomo, Nesher, IL;
Avri Harush, Kyriat Bialik, IL;
Spansion Israel Ltd., Netanya, IL;
Abstract
A method of reducing read disturb in NVM cells by using a first drain voltage to read the array cells and using a second, lower drain voltage, to read the reference cells. Drain voltages on global bitlines (GBLs) for both the array and the reference cells may be substantially the same as one another to maintain main path capacitance matching, while drain voltages on local bitlines (LBLs) for the reference cells may be lower than the drain voltage on local bitlines (LBLs) for the array cells to reduce second bit effect. Reducing the drain voltage of the reference cell at its drain port may be performed using a clamping device or a voltage drop device.