The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Dec. 27, 2007
Scott K. Suko, Dayton, MD (US);
Andrew R. Passerelli, Ellicott City, MD (US);
Gregory D. Nachtreib, Elkridge, MD (US);
Scott K. Suko, Dayton, MD (US);
Andrew R. Passerelli, Ellicott City, MD (US);
Gregory D. Nachtreib, Elkridge, MD (US);
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Abstract
A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element () having four semiconductor switching units () with each adapted for receiving a gate control signal. A level shift circuit () generates a biasing voltage signal communicated of the switching units () for biasing the switching units (), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (and) for reduced loss. The level shift circuit () is responsive to an externally provided control signal (). The switching units () are formed into a grouping of at least, a first and a second set () of interconnected semiconductor switching units () with each set () having gates of at least two of the interconnected switching units () connected with the level shift circuit output (). Both the switching units () and the level shift circuit () are formed on the MMIC structure (C).