The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Dec. 31, 2007
Ying Hong, Morgan Hill, CA (US);
Wipul P. Jayasekara, Los Gatos, CA (US);
Daniele Mauri, San Jose, CA (US);
David J. Seagle, Morgan Hill, CA (US);
Ying Hong, Morgan Hill, CA (US);
Wipul P. Jayasekara, Los Gatos, CA (US);
Daniele Mauri, San Jose, CA (US);
David J. Seagle, Morgan Hill, CA (US);
Hitachi Global Storage Technologies, Netherlands, B.V., Amsterdam, NL;
Abstract
A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.