The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 04, 2008
Naoyoshi Kawahara, Kawasaki, JP;
Yumi Saitou, Kawasaki, JP;
Naoyoshi Kawahara, Kawasaki, JP;
Yumi Saitou, Kawasaki, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device includes an insulating interlayer formed above a silicon substrate and provided with a concave portion in a certain location, a barrier metal film covering an inner wall of the insulating interlayer, a lower layer copper interconnect provided so as to be in contact with the barrier metal film and buried in the interior of the concave portion, and a protective film provided so as to be in contact with the lower layer copper interconnect and also provided on substantially the entire top surface of the lower layer copper interconnect. An upper surface of the lower layer copper interconnect is provided so as to be retracted to be closer to the substrate than an upper surface of barrier metal film on the side wall of the concave portion. The protective film contains Co or Ni as constituent element, and Co concentration or Ni concentration in the protective film in vicinity of the side wall of the barrier metal film is higher than Co concentration or Ni concentration in the barrier metal film in the central region of the concave portion.