The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2011

Filed:

Jul. 03, 2008
Applicants:

Markus Zundel, Taufkirchen, DE;

Rudolf Zelsacher, Klagenfurt, AT;

Franz Hirler, Isen, DE;

Dietmar Kotz, Moosburg, AT;

Hermann Peri, Wernberg, AT;

Armin Willmeroth, Augsburg, DE;

Inventors:

Markus Zundel, Taufkirchen, DE;

Rudolf Zelsacher, Klagenfurt, AT;

Franz Hirler, Isen, DE;

Dietmar Kotz, Moosburg, AT;

Hermann Peri, Wernberg, AT;

Armin Willmeroth, Augsburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor component includes a surface region. A modified doping region is provided in the edge region of the cell array. In the surface region or modified doping region the doping concentration is lowered and/or in the surface region or modified doping region the conductivity type is formed such that it is opposite to the conductivity type of the actual semiconductor material region, or in which a field plate region is provided.


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