The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Mar. 17, 2008
Applicant:
Tetsuya Ito, Kawasaki, JP;
Inventor:
Tetsuya Ito, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
It is disclosed a semiconductor device including a silicon substrate, provided with a plurality of cell active regions in a call region, an element isolation groove, formed in a portion, between any two of the plurality of cell active region, of the silicon substrate, a capacitor dielectric film, formed in the element isolation groove, a capacitor upper electrode, formed on the capacitor dielectric film, and configuring a capacitor together with the silicon substrate and the capacitor dielectric film. The semiconductor device is characterized in that a dummy active region is provided next to the cell region in the silicon substrate.