The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 31, 2007
Peter M. Dang, San Jose, CA (US);
Jorge A. Goitia, San Jose, CA (US);
Cherngye Hwang, San Jose, CA (US);
Eduardo T. Mireles, Guadalajara, MX;
Peter M. Dang, San Jose, CA (US);
Jorge A. Goitia, San Jose, CA (US);
Cherngye Hwang, San Jose, CA (US);
Eduardo T. Mireles, Guadalajara, MX;
Hitachi Global Storage Technologies, Netherlands, B.V., Amsterdam, NL;
Abstract
A shaper for shaping an ion beam and that can be used for both deposition and etching is described. The shaper includes a plate that is placed between an ion beam grid and an ion beam source. The plate covers holes in the grid, and is shaped and dimensioned such that the plate does not partially cover any holes in the grid that are directly adjacent to the plate. A hole is configured to mount the shaper at a center of the grid and at least one other hole is configured to secure the shaper to the grid to prevent the shaper from rotating relative to the grid. A center mount portion covers holes in the grid. The plate has two axes of reflection symmetry. The uniformity of both deposition and etching is improved.