The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Mar. 08, 2004
Akira Terakawa, Nara, JP;
Toshio Asaumi, Koube, JP;
Akira Terakawa, Nara, JP;
Toshio Asaumi, Koube, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A photovoltaic device capable of improving output characteristics is provided. This photovoltaic device comprises a crystalline semiconductor member, a substantially intrinsic first amorphous semiconductor layer formed on the front surface of the crystalline semiconductor member and a first conductivity type second amorphous semiconductor layer formed on the front surface of the first amorphous semiconductor layer, and has a hydrogen concentration peak in the first amorphous semiconductor layer. Thus, the quantity of hydrogen atoms in the first amorphous semiconductor layer is so increased that the hydrogen atoms increased in quantity can be bonded to dangling bonds of silicon atoms forming defects in the first amorphous semiconductor layer for inactivating the dangling bonds.