The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Dec. 27, 2007
Aaron Frank, Murphy, TX (US);
David Gonzalez, Jr., Plano, TX (US);
Mark R. Visokay, Wappingers Falls, NY (US);
Clint Montgomery, Coppell, TX (US);
Aaron Frank, Murphy, TX (US);
David Gonzalez, Jr., Plano, TX (US);
Mark R. Visokay, Wappingers Falls, NY (US);
Clint Montgomery, Coppell, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
One embodiment relates to a method of fabricating an integrated circuit. In the method, p-type polysilicon is provided over a semiconductor body, where the p-type polysilicon has a first depth as measured from a top surface of the p-type polysilicon. An n-type dopant is implanted into the p-type polysilicon to form a counter-doped layer at the top-surface of the p-type polysilicon, where the counter-doped layer has a second depth that is less than the first depth. A catalyst metal is provided that associates with the counter-doped layer to form a catalytic surface. A metal is deposited over the catalytic surface. A thermal process is performed that reacts the metal with the p-type polysilicon in the presence of the catalytic surface to form a metal silicide. Other methods and devices are also disclosed.