The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2011

Filed:

Dec. 21, 2006
Applicants:

Robert Bertram Ogle, San Jose, CA (US);

Joong Jeon, Los Altos, CA (US);

Eric Paton, Morgan Hill, CA (US);

Austin Frenkel, San Jose, CA (US);

Inventors:

Robert Bertram Ogle, San Jose, CA (US);

Joong Jeon, Los Altos, CA (US);

Eric Paton, Morgan Hill, CA (US);

Austin Frenkel, San Jose, CA (US);

Assignees:

Spansion LLC, Sunnyvale, CA (US);

Globalfoundries Inc., Grand Cayman, KY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8247 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system and method are disclosed for processing a zero angstrom oxide interface dual poly gate structure for a flash memory device. An exemplary method can include removing an oxide on a surface of a first poly layer and forming a second poly layer on the first poly layer in a same processing chamber. A transfer of the structure is not needed from an oxide removal tool to, for example, a poly layer formation tool, an implant tool, and the like. As a result, impurities containing a silicon oxide caused by exposure of the first poly layer to an oxygen-containing atmosphere do not form at the interface of the first and second poly layers.


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