The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
May. 08, 2007
Applicants:
Moon-gyu Jang, Daejon, KR;
Yark-yeon Kim, Daejon, KR;
Chel-jong Choi, Daejon, KR;
Myung-sim Jun, Daejon, KR;
Tae-youb Kim, Seoul, KR;
Seong-jae Lee, Daejon, KR;
Inventors:
Moon-Gyu Jang, Daejon, KR;
Yark-Yeon Kim, Daejon, KR;
Chel-Jong Choi, Daejon, KR;
Myung-Sim Jun, Daejon, KR;
Tae-Youb Kim, Seoul, KR;
Seong-Jae Lee, Daejon, KR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.