The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Feb. 06, 2004
Pere Roca I Cabarrocas, Paris, FR;
Régis Vanderhaghen, Palaiseau, FR;
Bernard Drevillon, Clamart, FR;
Pere Roca I Cabarrocas, Paris, FR;
Régis Vanderhaghen, Palaiseau, FR;
Bernard Drevillon, Clamart, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Ecole Polytechnique, Palaiseau, FR;
Abstract
A transistor for active matrix display and a method for producing the transistor (). The transistor () includes a microcrystalline silicon film () and an insulator (). The crystalline fraction of the microcrystalline silicon film () is above 80%. According to the invention, the transistor () includes a plasma treated interface () located between the insulator () and the microcrystalline silicon film () so that the transistor () has a linear mobility equal or superior to 1.5 cm2V−1s−1, shows threshold voltage stability and wherein the microcrystalline silicon film () includes grains () whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.