The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Oct. 19, 2007
Tea-kwang Yu, Suwon-si, KR;
Kong-sam Jang, Yongin-si, KR;
Kwang-tae Kim, Suwon-si, KR;
Ji-hoon Park, Seoul, KR;
Eun-mi Hong, Busan, KR;
Tea-Kwang Yu, Suwon-si, KR;
Kong-Sam Jang, Yongin-si, KR;
Kwang-Tae Kim, Suwon-si, KR;
Ji-Hoon Park, Seoul, KR;
Eun-Mi Hong, Busan, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a device isolation layer on a semiconductor substrate defining an active region in the semiconductor substrate, a low voltage well of a first conductivity type in the active region of the semiconductor substrate, a high voltage impurity region of a second conductivity type in the active region of the semiconductor substrate, the high voltage impurity region positioned in an upper portion of the low voltage well, a high concentration impurity region of the second conductivity type within the high voltage impurity region and spaced apart from the device isolation layer, and a floating impurity region of the first conductivity type between the device isolation layer and the high concentration impurity region, the floating impurity region being a portion of an upper surface of the active region.