The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Sep. 03, 2009
Bo-sung Kim, Seoul, KR;
Soo-jin Kim, Suwon-si, KR;
Young-min Kim, Yongin-si, KR;
Keun-kyu Song, Yongin-si, KR;
Yong-uk Lee, Seongnam-si, KR;
Mun-pyo Hong, Seongnam-si, KR;
Tae-young Choi, Seoul, KR;
Joon-hak OH, Yongin-si, KR;
Bo-sung Kim, Seoul, KR;
Soo-jin Kim, Suwon-si, KR;
Young-min Kim, Yongin-si, KR;
Keun-kyu Song, Yongin-si, KR;
Yong-uk Lee, Seongnam-si, KR;
Mun-pyo Hong, Seongnam-si, KR;
Tae-young Choi, Seoul, KR;
Joon-hak Oh, Yongin-si, KR;
Abstract
A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.