The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 07, 2008
Tsun-neng Yang, Taipei, TW;
Shan-ming Lan, Taoyuan County, TW;
Chin-chen Chiang, Taoyuan County, TW;
Wei-yang MA, Taipei County, TW;
Chien-te Ku, Taoyuan County, TW;
Yu-hsiang Huang, Taoyuan County, TW;
Tsun-Neng Yang, Taipei, TW;
Shan-Ming Lan, Taoyuan County, TW;
Chin-Chen Chiang, Taoyuan County, TW;
Wei-Yang Ma, Taipei County, TW;
Chien-Te Ku, Taoyuan County, TW;
Yu-Hsiang Huang, Taoyuan County, TW;
Atomic Energy Council-Institute of Nuclear Energy, Lungtan, Taoyuan, TW;
Abstract
Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a ptype back surface field film. The temperature is raised to grow a ptype light-soaking film on the ptype back surface field film. Phosphine is deposited on the ptype light-soaking film to form an ntype emitter. Thus, an n-p-plaminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n-p-plaminate, thus forming an anti-reflection film of SiCN/SiO2 on the ntype emitter. The n-p-plaminate is etched in a patterned mask process. A ptype ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The ntype emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An ntype ohmic contact is formed on the ntype emitter.