The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jan. 07, 2008
Tsun-neng Yang, Taipei, TW;
Shan-ming Lan, Taoyuan County, TW;
Chin-chen Chiang, Taoyuan County, TW;
Wei-yang MA, Taipei County, TW;
Chien-te Ku, Taoyuan County, TW;
Yu-hsiang Huang, Taoyuan County, TW;
Tsun-Neng Yang, Taipei, TW;
Shan-Ming Lan, Taoyuan County, TW;
Chin-Chen Chiang, Taoyuan County, TW;
Wei-Yang Ma, Taipei County, TW;
Chien-Te Ku, Taoyuan County, TW;
Yu-Hsiang Huang, Taoyuan County, TW;
Abstract
A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a ptype poly-silicon back surface field, a ptype poly-silicon light-soaking film and an ntype poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the ntype poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the ptype poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the ptype poly-silicon back surface field. Finally, the ntype poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO.