The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Aug. 21, 2007
Tony Ivanov, Summerfield, NC (US);
Julio Costa, Summerfield, NC (US);
Jonathan Hale Hammond, Oak Ridge, NC (US);
Walter Anthony Wohlmuth, Greensboro, NC (US);
Tony Ivanov, Summerfield, NC (US);
Julio Costa, Summerfield, NC (US);
Jonathan Hale Hammond, Oak Ridge, NC (US);
Walter Anthony Wohlmuth, Greensboro, NC (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
The present invention includes a fabrication method to construct a combined MEMS device and IC on a silicon-on-insulator (SOI) wafer (MEMS-IC) using standard foundry IC processing techniques. The invention also includes the resulting MEMS-IC. Deposition layers are added to the SOI wafer and etched away to form interconnects for electronic components for the IC. In one embodiment of the present invention, standard foundry IC processing etching techniques may be used to etch away parts of the insulating layer and device layer of the SOI wafer to create fine gaps and other detailed mechanical features of the MEMS device. Finely detailed etching patterns may be added by using imprint lithography instead of using contact or optical lithography.