The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 04, 2011

Filed:

Jan. 31, 2007
Applicants:

John P. Salvador, Penfield, NY (US);

Balsu Lakshmanan, Pittsford, NY (US);

Abdullah B. Alp, West Henrietta, NY (US);

David A. Arthur, Honeoye Falls, NY (US);

Inventors:

John P. Salvador, Penfield, NY (US);

Balsu Lakshmanan, Pittsford, NY (US);

Abdullah B. Alp, West Henrietta, NY (US);

David A. Arthur, Honeoye Falls, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 8/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A system and method for reducing cathode carbon corrosion during start-up of a fuel cell stack. If a long enough period of time has gone by since the last system shutdown, then both the anode side and the cathode side of the stack will be filled with air. If the system includes split sub-stacks, then a start-up sequence uses a fast hydrogen purge through each sub-stack separately so as to minimize the time of the hydrogen/air front flowing through the anode side of the stacks. The start-up sequence then employs a slow hydrogen purge through the sub-stacks at the same time. If the time from the last shutdown is short enough where a significant amount of hydrogen still exists in the cathode side and the anode side of the sub-stacks, then the fast hydrogen purge can be eliminated, and the start-up sequence proceeds directly to the slow hydrogen purge.


Find Patent Forward Citations

Salvador, John. (2011). Strategies for mitigating cell degradation during start-up and shutdown with h2/n2 storage (U.S. Patent No. 7862942). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7862942

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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