The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jul. 24, 2006
Takashi Azuma, Kawasaki, JP;
Shin-ichiro Umemura, Muko, JP;
Tatsuya Nagata, Ishioka, JP;
Hiroshi Fukuda, Tokyo, JP;
Shuntaro Machida, Kokubunji, JP;
Toshiyuki Mine, Fussa, JP;
Takashi Azuma, Kawasaki, JP;
Shin-ichiro Umemura, Muko, JP;
Tatsuya Nagata, Ishioka, JP;
Hiroshi Fukuda, Tokyo, JP;
Shuntaro Machida, Kokubunji, JP;
Toshiyuki Mine, Fussa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A transducer for transmitting and receiving ultrasonic waves to a diaphragm-based ultrasonic transducer device using silicon as a base material. An electro-acoustic transducer device which can have a first electrode formed on top of, or inside, a substrate and having a thin film provided on top of the substrate. The device can also have a second electrode formed on top of, or inside, the thin film. A void layer can be provided between the first electrode and the second electrode. A charge-storage layer can be provided between the first electrode and the second electrode. A source electrode and a drain electrode can also be provided for measuring a quantity of electricity stored in the charge-storage layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile