The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

Aug. 19, 2008
Applicants:

Yu Ying Hsiao, Hsinchu, TW;

Cheng Wen Wu, Hsinchu, TW;

Inventors:

Yu Ying Hsiao, Hsinchu, TW;

Cheng Wen Wu, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A built-in self-test system applied to NAND flash memory comprises a built-in self-test circuit, a built-in redundancy-analysis circuit, a content addressable memory, a spare memory, a page-mode processor and an address generator. The built-in self-test circuit is configured to test for defective data in a NAND flash memory. The built-in redundancy-analysis circuit is connected to the built-in self-test circuit. The content addressable memory is connected to the built-in redundancy-analysis circuit for storing the address of the defective data. The spare memory is electrically connected to the content addressable memory. The page-mode processor is configured to generate a page address signal and a compensation signal according to an address signal of the NAND flash memory. The address generator is configured to generate a current address signal according to the page address signal and compensation signal to the content addressable memory.


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