The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

Sep. 30, 2008
Applicants:

Hai LI, Eden Prairie, MN (US);

Yiran Chen, Eden Prairie, MN (US);

Hongyue Liu, Maple Grove, MN (US);

Xuguang Wang, Eden Prairie, MN (US);

Inventors:

Hai Li, Eden Prairie, MN (US);

Yiran Chen, Eden Prairie, MN (US);

Hongyue Liu, Maple Grove, MN (US);

Xuguang Wang, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory array includes a plurality of magnetic tunnel junction cells arranged in an array. Each magnetic tunnel junction cell is electrically coupled between a bit line and a source line. The magnetic tunnel junction cell is configured to switch between a high resistance state and a low resistance state by passing a write current passing though the magnetic tunnel junction cell. A word line is electrically coupled to a gate of the transistor. The source line is a common source line for the plurality of magnetic tunnel junctions.


Find Patent Forward Citations

Loading…