The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Feb. 13, 2007
Katsuro Watanabe, Tokyo, JP;
Taku Shintani, Tokyo, JP;
Kazuhiro Ueda, Tokyo, JP;
Masahiro Osugi, Tokyo, JP;
Katsuro Watanabe, Tokyo, JP;
Taku Shintani, Tokyo, JP;
Kazuhiro Ueda, Tokyo, JP;
Masahiro Osugi, Tokyo, JP;
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and a lower magnetic shield layer and instability of reproducing property resulting from shield process, and maintain electrostatic capacity to a small value in a CPP magnetoresistive head. In an embodiment of a magnetoresistive head of the present invention, length in the sensor height direction of bottom surface of a pinning layer is longer than the length in the sensor height direction of bottom surface of a first ferromagnetic layer. The angle formed by an edge in the sensor height direction of the pinning layer to the surface extended from a bottom surface of a magnetoresistive film is smaller than the angle formed by an edge in the sensor height direction of a second ferromagnetic layer to the surface extended from a bottom surface of the magnetoresistive film. Height of top surface of a sensor height direction refill film is equal to or higher than the top surface of the magnetoresistive film.